Eindhoven, Netherlands (PRWEB) June 18, 2012

NXP Semiconductors N.V. (NASDAQ: NXPI) today introduced the BGU706x series of multi-stage base station LNAs with variable gain featuring the industrys lowest noise figure of 0.9 dB for a receive chain in silicon. The architecture of the LNA is based on the integration of a very low-noise LNA with a bypass function followed by an analog-controlled variable gain amplifier (VGA). These BGU706x low-noise amplifiers deliver high linearity, while saving up to 80 percent in component count.

With a high RF input overdrive of 10-15 dBm, the BGU706x base-station LNAs provide exceptional ruggedness, and make use of NXPs silicon germanium carbon (SiGe:C) BiCMOS process technology for outstanding performance in high-frequency applications. NXP will showcase the BGU705x fixed gain LNAs and the BGU706x variable gain LNAs this week at the IMS2012 International Microwave Symposium in Montreal (booth 607).

Wireless infrastructure today faces a challenge as mobile data communications rapidly overtake voice communications. With its very low noise figure, our new multi-stage LNAs enable larger cell coverage, helping operators realize significant CAPEX and OPEX savings by reducing the total number of base stations required, said Kees Schetters, director of marketing, wireless infrastructure, NXP Semiconductors. By simplifying design-in, the LNAs also enable engineers to focus more on pushing the performance limits of their applications to achieve a significant competitive edge.

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